Prospects of high voltage power ICs on thin SOI

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1992-December, Issue , 1992, Pages 229-232

  Nakagawa, A ^a   Yasuhara, N ^a   Omura, I ^a   Yamaguchi, Y ^a   Ogura, T ^a   Matsudai, T ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS; POWER INTEGRATED CIRCUITS; TIMING CIRCUITS;

APPLIED VOLTAGES; DEVICE CHARACTERISTICS; DEVICE ISOLATION; HIGH VOLTAGE DEVICES; HIGH VOLTAGE POWER; HIGH-SPEED SWITCHING; LAYER THICKNESS; PACKING DENSITY;

SILICON ON INSULATOR TECHNOLOGY;

EID: 84867312234     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1992.307348     Document Type: Conference Paper

References (6)

1. A. Nakagawa et al, Proc. of 1990 ISPSD, pJ-7
2. T. Matsndai et al, Proc. or 1992 ISPSD, p. 272.
3. A. Nakagawa et al. Ext. Abstract or SSDM 92, p. 137
4. E. Arnold et al, Proc. of 1992 ISPSD, p. 242.
5. Y. S. Huang et al, Proc. of 1992 ISPSD, p. 40.
6. H. Chen et al, IEEE Tram. Electron Devices, ED 36, p. 4SS(19S9)