50 nm ultra-thin base silicon bipolar device fabrication based on photo epitaxial growth

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1989, Pages 91-92

  Suzuki, K ^a   Fukano, T ^a   Ishiwari, H ^a   Yamazaki, T ^a   Taguchi, M ^a   Ito, T ^a   Ishikawa, H ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS--EPITAXIAL GROWTH; SEMICONDUCTING SILICON;

BASE TRANSIT TIME; EMITTER-BASE JUNCTION FORMATION; SILICON BIPOLAR DEVICE;

TRANSISTORS, BIPOLAR;

EID: 0024888019     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)