Novel high performance self-aligned 0.15 micron long T-gate AlInAs-GaInAs HEMTs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1989, Pages 101-104

  Mishra, U K ^a   Brown, A S ^a   Jelloian, L M ^a   Thompson, M ^a   Nguyen, L D ^a   Rosenbaum, S E ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

HEMT; HIGH ELECTRON MOBILITY TRANSISTORS; SELF-ALIGNED TECHNIQUE;

TRANSISTORS, FIELD EFFECT;

EID: 0024937385     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)