-
1
-
-
0016963551
-
Microwave field-effect transistors-1976
-
June
-
C. A. Liechti, “Microwave field-effect transistors-1976,” IEEE Trans. Microwave Theory Tech., vol. MTT-24, pp. 279–299, June 1976.
-
(1976)
IEEE Trans. Microwave Theory Tech.
, vol.MTT-24
, pp. 279-299
-
-
Liechti, C.A.1
-
2
-
-
84939063028
-
The Schottky barrier gallium arsenide field-effect transistor
-
P. L. Hower, W. W. Hooper, D. A. Tremere, W. Lehrer, and C. A. Bittmann, “The Schottky barrier gallium arsenide field-effect transistor,” in Proc. 1968 Int. Symp. Gallium Arsenide and Related Compounds, pp. 187–195.
-
Proc. 1968 Int. Symp. Gallium Arsenide and Related Compounds
, pp. 187-195
-
-
Hower, P.L.1
Hooper, W.W.2
Tremere, D.A.3
Lehrer, W.4
Bittmann, C.A.5
-
3
-
-
84915606227
-
The importance of substrate properties on GaAs FET performance
-
(Cornell University, Ithaca, NY, Aug. 19–21)
-
J. Barrera, “The importance of substrate properties on GaAs FET performance,” in Proc. 5th Bienn. Cornell Elec. Eng. Conf. (Cornell University, Ithaca, NY, Aug. 19–21, 1975), pp. 135–144.
-
(1975)
Proc. 5th Bienn. Cornell Elec. Eng. Conf.
, pp. 135-144
-
-
Barrera, J.1
-
4
-
-
84939049744
-
Effects of deep centers on microwave frequency characteristics GaAs Schottky barrier gate FET
-
(Tokyo 1972); also in Jap. J. Appl. Phys., vol. 12, suppl. 12-1, pp. 71–77, 1973
-
S. Asai, S. Ishikawa, H. Kurono, S. Takahashi, and H. Kodera, “Effects of deep centers on microwave frequency characteristics GaAs Schottky barrier gate FET,” in Proc. 4th Conf. Solid-State Devices (Tokyo 1972); also in Jap. J. Appl. Phys., vol. 12, suppl. 12-1, pp. 71–77, 1973.
-
(1972)
Proc. 4th Conf. Solid-State Devices
-
-
Asai, S.1
Ishikawa, S.2
Kurono, H.3
Takahashi, S.4
Kodera, H.5
-
5
-
-
0016601075
-
Multi-layer epitaxial technology for the Schottky barrier GaAs field-effect transistor
-
T. Nozaki, M. Ogawa, H. Terao, and H. Watanabe, “Multi-layer epitaxial technology for the Schottky barrier GaAs field-effect transistor,” in Proc. 1974 Int. Symp. Gallium Arsenide and Related Compounds, pp. 46–54.
-
Proc. 1974 Int. Symp. Gallium Arsenide and Related Compounds
, pp. 46-54
-
-
Nozaki, T.1
Ogawa, M.2
Terao, H.3
Watanabe, H.4
-
6
-
-
84913326937
-
Electrical properties of the interface between n-GaAs epitaxial layer and a Cr-doped Substrate
-
N. Yokoyama, A. Shibatomi, S. Ohkawa, M. Fukuta, and H. Ishikawa, “Electrical properties of the interface between n-GaAs epitaxial layer and a Cr-doped Substrate,” in Proc. 1976 Int. Symp. Gallium Arsenide and Related Compounds, pp. 201–209.
-
Proc. 1976 Int. Symp. Gallium Arsenide and Related Compounds
, pp. 201-209
-
-
Yokoyama, N.1
Shibatomi, A.2
Ohkawa, S.3
Fukuta, M.4
Ishikawa, H.5
-
8
-
-
84913274475
-
Long-term: stabilization of microwave FET's
-
Nov.
-
D. R. Ch'en, H. F. Cooke, and J. N. Wholey, “Long-term: stabilization of microwave FET's,” Microwave J., pp. 60–61, Nov. 1975.
-
(1975)
Microwave J.
, pp. 60-61
-
-
Ch'en, D.R.1
Cooke, H.F.2
Wholey, J.N.3
-
9
-
-
0016963552
-
Reliability study of GaAs MESFET's
-
June
-
T. Irie, I. Nagasako, H. Kozu, and K. Sekido, “Reliability study of GaAs MESFET's,” IEEE Trans. Microwave Theory Tech., vol. MTT-24, pp. 321–328, June 1976.
-
(1976)
IEEE Trans. Microwave Theory Tech.
, vol.MTT-24
, pp. 321-328
-
-
Irie, T.1
Nagasako, I.2
Kozu, H.3
Sekido, K.4
-
10
-
-
4243078065
-
Investigation on the drift of GaAs MESFET's by high frequency parameters
-
Tech. Dig. 1979 Int. Conf. Solid-State Devices (Tokyo 1979); to be published in
-
K. Ohata, H. Itoh, and F. Hasegawa, “Investigation on the drift of GaAs MESFET's by high frequency parameters,” in Tech. Dig. 1979 Int. Conf. Solid-State Devices (Tokyo 1979); to be published in Jap. J. Appl. Phys., vol. 19, suppl. 19-1.
-
J. Appl. Phys.
, vol.19
-
-
Ohata, K.1
Itoh, H.2
Hasegawa, F.3
-
11
-
-
84939046725
-
Recent development of the transferred electron logic devices in Japan
-
H. Yanai and T. Ikoma, “Recent development of the transferred electron logic devices in Japan,” in IEEE-MTTS Int. Microwave Symp. Dig., pp. 161–163, 1976.
-
(1976)
IEEE-MTTS Int. Microwave Symp. Dig.
, pp. 161-163
-
-
Yanai, H.1
Ikoma, T.2
-
12
-
-
84916416669
-
Anomalous phenomena of current-voltage characteristics observed in Gunn effect digital devices under dc bias conditions
-
(in Japanese), Nov.
-
M. Tanimoto, K. Suzuki, T. Itoh, H. Yanai, L. M. F. Kaufmann, W. Nievendick, and K. Heime, “Anomalous phenomena of current-voltage characteristics observed in Gunn effect digital devices under dc bias conditions,” Trans. IECE Japan (in Japanese), vol. 60-C, pp. 698–705, Nov. 1977.
-
(1977)
Trans. IECE Japan
, vol.60-C
, pp. 698-705
-
-
Tanimoto, M.1
Suzuki, K.2
Itoh, T.3
Yanai, H.4
Kaufmann, L.M.F.5
Nievendick, W.6
Heime, K.7
-
13
-
-
84939036366
-
Design theory of a GaAs-SBG· FET with consideration of the electron velocity saturated region
-
(in Japanese), Feb.
-
T. Sugata, M. Ida, and M. Uchida, “Design theory of a GaAs-SBG· FET with consideration of the electron velocity saturated region,” Trans. IECE Japan (in Japanese), vol. J59-C, pp. 107–114, Feb. 1976.
-
(1976)
Trans. IECE Japan
, vol.J59-C
, pp. 107-114
-
-
Sugata, T.1
Ida, M.2
Uchida, M.3
-
14
-
-
0014744373
-
Microwave properties of Schottky-barrier field-effect transistors
-
Mar.
-
P. Wolf, “Microwave properties of Schottky-barrier field-effect transistors,” IBM J. Res. Develop., vol. 14, pp. 125–141, Mar. 1970.
-
(1970)
IBM J. Res. Develop.
, vol.14
, pp. 125-141
-
-
Wolf, P.1
-
15
-
-
0014863545
-
Voltage-current characteristics of GaAs J-FET's in the hot electron range
-
Oct.
-
K. Lehovec and R. Zuleeg, “Voltage-current characteristics of GaAs J-FET's in the hot electron range,” Solid-State Electron., vol. 13, pp. 1415–1426, Oct. 1970.
-
(1970)
Solid-State Electron.
, vol.13
, pp. 1415-1426
-
-
Lehovec, K.1
Zuleeg, R.2
-
16
-
-
0014533974
-
General theory for pinched operation of the junction-gate FET
-
A. B. Grebene and S. K. Ghandhi, “General theory for pinched operation of the junction-gate FET,” Solid-State Electron., vol. 12, pp. 573–589, 1969.
-
(1969)
Solid-State Electron.
, vol.12
, pp. 573-589
-
-
Grebene, A.B.1
Ghandhi, S.K.2
-
17
-
-
0001495342
-
Characteristics of junction field effect devices with small channel length-to-width ratios
-
J. R. Hauser, “Characteristics of junction field effect devices with small channel length-to-width ratios,” Solid-State Electron., vol. 10, pp. 577–587, 1967.
-
(1967)
Solid-State Electron.
, vol.10
, pp. 577-587
-
-
Hauser, J.R.1
-
18
-
-
84938439024
-
Long-term drift of GaAs MESFET characteristics and its dependence on substrate with buffer layer
-
T. Itoh and H. Yanai, “Long-term drift of GaAs MESFET characteristics and its dependence on substrate with buffer layer,” in Proc. 1978 Int. Symp. Gallium Arsenide and Related Compounds, pp. 326–334.
-
Proc. 1978 Int. Symp. Gallium Arsenide and Related Compounds
, pp. 326-334
-
-
Itoh, T.1
Yanai, H.2
-
19
-
-
0017982108
-
Deep trapping effects at the GaAs-GaAs: Cr interface in GaAs FET structures
-
June
-
Y. M. Houng and G. L. Pearson, “Deep trapping effects at the GaAs-GaAs: Cr interface in GaAs FET structures,” J. Appl. Phys., vol. 49, pp. 3348–3352, June 1978.
-
(1978)
J. Appl. Phys.
, vol.49
, pp. 3348-3352
-
-
Houng, Y.M.1
Pearson, G.L.2
-
20
-
-
0016081559
-
Deep-level transient spectroscopy: A new method to characterize traps in semiconductors
-
July
-
D. V. Lang, “Deep-level transient spectroscopy: A new method to characterize traps in semiconductors,” J. Appl. Phys., vol. 45, pp. 3023–3032, July 1974.
-
(1974)
J. Appl. Phys.
, vol.45
, pp. 3023-3032
-
-
Lang, D.V.1
-
21
-
-
0242359392
-
Electrical traps in GaAs microwave F.E. T. s
-
June
-
M. G. Adlerstein, “Electrical traps in GaAs microwave F.E. T. s,” Electron. Lett., vol. 12, p. 297, June 1976.
-
(1976)
Electron. Lett.
, vol.12
, pp. 297
-
-
Adlerstein, M.G.1
-
22
-
-
84956267968
-
Interface effects on drain current instability in GaAs MESFETs with buffer layer
-
Tech. Dig. 1979 Int. Conf. Solid-State Devices (Tokyo 1979); to be published in
-
T. Itoh and H. Yanai, “Interface effects on drain current instability in GaAs MESFETs with buffer layer,” in Tech. Dig. 1979 Int. Conf. Solid-State Devices (Tokyo 1979); to be published in Jap. J. Appl. Phys., vol. 19, suppl. 19–1.
-
Jap. J. Appl. Phys.
, vol.19
, pp. 19-21
-
-
Itoh, T.1
Yanai, H.2
-
23
-
-
0017542223
-
Hole traps in bulk and epitaxial GaAs crystals
-
Oct.
-
A. Mitonneau, G. M. Martin, and A. Mircea, “Hole traps in bulk and epitaxial GaAs crystals,” Electron. Lett., vol. 13, p. 666, Oct. 1977.
-
(1977)
Electron. Lett.
, vol.13
, pp. 666
-
-
Mitonneau, A.1
Martin, G.M.2
Mircea, A.3
-
24
-
-
51649181242
-
A study of deep levels in GaAs by capacitance spectroscopy
-
D. V. Lang and R. A. Logan, “A study of deep levels in GaAs by capacitance spectroscopy,” J. Electron. Mat., vol. 4, p. 1053, 1975.
-
(1975)
J. Electron. Mat.
, vol.4
, pp. 1053
-
-
Lang, D.V.1
Logan, R.A.2
-
25
-
-
85069356775
-
Outdiffusion of chromium from GaAs substrates
-
B. Tuck, G. A. Adegoboyega, P. R. Jay, and M. J. Cardwell, “Outdiffusion of chromium from GaAs substrates,” in Proc. 1978 Int. Symp. Gallium Arsenide and Related Compounds, pp. 114–124.
-
Proc. 1978 Int. Symp. Gallium Arsenide and Related Compounds
, pp. 114-124
-
-
Tuck, B.1
Adegoboyega, G.A.2
Jay, P.R.3
Cardwell, M.J.4
-
26
-
-
0017983583
-
4-GHz 15-W power GaAs MESFET
-
June
-
M. Fukuta, T. Mimura, H. Suzuki, and K. Suyama, “4-GHz 15-W power GaAs MESFET,” IEEE Trans. Electron Devices, vol. ED-25, pp. 559–563, June 1978.
-
(1978)
IEEE Trans. Electron Devices
, vol.ED-25
, pp. 559-563
-
-
Fukuta, M.1
Mimura, T.2
Suzuki, H.3
Suyama, K.4
-
27
-
-
0017982603
-
Improvement of the drain breakdown voltage of GaAs power MESFET's by a simple recess structure
-
June
-
T. Furutsuka, T. Tsuji, and F. Hasegawa, “Improvement of the drain breakdown voltage of GaAs power MESFET's by a simple recess structure,” IEEE Trans. Electron Devices, vol. ED-25, pp. 563–567, June 1978.
-
(1978)
IEEE Trans. Electron Devices
, vol.ED-25
, pp. 563-567
-
-
Furutsuka, T.1
Tsuji, T.2
Hasegawa, F.3
-
28
-
-
0017983302
-
Light emission and burnout characteristics of GaAs power MESFET's
-
June
-
R. Yamamoto, H. Higashisaka, and F. Hasegawa, “Light emission and burnout characteristics of GaAs power MESFET's,” IEEE Trans. Electron Devices, vol ED-25, pp. 567–573, June 1978.
-
(1978)
IEEE Trans. Electron Devices
, vol.ED-25
, pp. 567-573
-
-
Yamamoto, R.1
Higashisaka, H.2
Hasegawa, F.3
|