메뉴 건너뛰기




Volumn 27, Issue 6, 1980, Pages 1037-1045

Stability of Performance and Interfacial Problems in GaAs MESFET's

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT;

EID: 0019024344     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1980.19984     Document Type: Article
Times cited : (92)

References (28)
  • 1
    • 0016963551 scopus 로고
    • Microwave field-effect transistors-1976
    • June
    • C. A. Liechti, “Microwave field-effect transistors-1976,” IEEE Trans. Microwave Theory Tech., vol. MTT-24, pp. 279–299, June 1976.
    • (1976) IEEE Trans. Microwave Theory Tech. , vol.MTT-24 , pp. 279-299
    • Liechti, C.A.1
  • 3
    • 84915606227 scopus 로고
    • The importance of substrate properties on GaAs FET performance
    • (Cornell University, Ithaca, NY, Aug. 19–21)
    • J. Barrera, “The importance of substrate properties on GaAs FET performance,” in Proc. 5th Bienn. Cornell Elec. Eng. Conf. (Cornell University, Ithaca, NY, Aug. 19–21, 1975), pp. 135–144.
    • (1975) Proc. 5th Bienn. Cornell Elec. Eng. Conf. , pp. 135-144
    • Barrera, J.1
  • 4
    • 84939049744 scopus 로고
    • Effects of deep centers on microwave frequency characteristics GaAs Schottky barrier gate FET
    • (Tokyo 1972); also in Jap. J. Appl. Phys., vol. 12, suppl. 12-1, pp. 71–77, 1973
    • S. Asai, S. Ishikawa, H. Kurono, S. Takahashi, and H. Kodera, “Effects of deep centers on microwave frequency characteristics GaAs Schottky barrier gate FET,” in Proc. 4th Conf. Solid-State Devices (Tokyo 1972); also in Jap. J. Appl. Phys., vol. 12, suppl. 12-1, pp. 71–77, 1973.
    • (1972) Proc. 4th Conf. Solid-State Devices
    • Asai, S.1    Ishikawa, S.2    Kurono, H.3    Takahashi, S.4    Kodera, H.5
  • 8
    • 84913274475 scopus 로고
    • Long-term: stabilization of microwave FET's
    • Nov.
    • D. R. Ch'en, H. F. Cooke, and J. N. Wholey, “Long-term: stabilization of microwave FET's,” Microwave J., pp. 60–61, Nov. 1975.
    • (1975) Microwave J. , pp. 60-61
    • Ch'en, D.R.1    Cooke, H.F.2    Wholey, J.N.3
  • 10
    • 4243078065 scopus 로고    scopus 로고
    • Investigation on the drift of GaAs MESFET's by high frequency parameters
    • Tech. Dig. 1979 Int. Conf. Solid-State Devices (Tokyo 1979); to be published in
    • K. Ohata, H. Itoh, and F. Hasegawa, “Investigation on the drift of GaAs MESFET's by high frequency parameters,” in Tech. Dig. 1979 Int. Conf. Solid-State Devices (Tokyo 1979); to be published in Jap. J. Appl. Phys., vol. 19, suppl. 19-1.
    • J. Appl. Phys. , vol.19
    • Ohata, K.1    Itoh, H.2    Hasegawa, F.3
  • 11
    • 84939046725 scopus 로고
    • Recent development of the transferred electron logic devices in Japan
    • H. Yanai and T. Ikoma, “Recent development of the transferred electron logic devices in Japan,” in IEEE-MTTS Int. Microwave Symp. Dig., pp. 161–163, 1976.
    • (1976) IEEE-MTTS Int. Microwave Symp. Dig. , pp. 161-163
    • Yanai, H.1    Ikoma, T.2
  • 12
    • 84916416669 scopus 로고
    • Anomalous phenomena of current-voltage characteristics observed in Gunn effect digital devices under dc bias conditions
    • (in Japanese), Nov.
    • M. Tanimoto, K. Suzuki, T. Itoh, H. Yanai, L. M. F. Kaufmann, W. Nievendick, and K. Heime, “Anomalous phenomena of current-voltage characteristics observed in Gunn effect digital devices under dc bias conditions,” Trans. IECE Japan (in Japanese), vol. 60-C, pp. 698–705, Nov. 1977.
    • (1977) Trans. IECE Japan , vol.60-C , pp. 698-705
    • Tanimoto, M.1    Suzuki, K.2    Itoh, T.3    Yanai, H.4    Kaufmann, L.M.F.5    Nievendick, W.6    Heime, K.7
  • 13
    • 84939036366 scopus 로고
    • Design theory of a GaAs-SBG· FET with consideration of the electron velocity saturated region
    • (in Japanese), Feb.
    • T. Sugata, M. Ida, and M. Uchida, “Design theory of a GaAs-SBG· FET with consideration of the electron velocity saturated region,” Trans. IECE Japan (in Japanese), vol. J59-C, pp. 107–114, Feb. 1976.
    • (1976) Trans. IECE Japan , vol.J59-C , pp. 107-114
    • Sugata, T.1    Ida, M.2    Uchida, M.3
  • 14
    • 0014744373 scopus 로고
    • Microwave properties of Schottky-barrier field-effect transistors
    • Mar.
    • P. Wolf, “Microwave properties of Schottky-barrier field-effect transistors,” IBM J. Res. Develop., vol. 14, pp. 125–141, Mar. 1970.
    • (1970) IBM J. Res. Develop. , vol.14 , pp. 125-141
    • Wolf, P.1
  • 15
    • 0014863545 scopus 로고
    • Voltage-current characteristics of GaAs J-FET's in the hot electron range
    • Oct.
    • K. Lehovec and R. Zuleeg, “Voltage-current characteristics of GaAs J-FET's in the hot electron range,” Solid-State Electron., vol. 13, pp. 1415–1426, Oct. 1970.
    • (1970) Solid-State Electron. , vol.13 , pp. 1415-1426
    • Lehovec, K.1    Zuleeg, R.2
  • 16
    • 0014533974 scopus 로고
    • General theory for pinched operation of the junction-gate FET
    • A. B. Grebene and S. K. Ghandhi, “General theory for pinched operation of the junction-gate FET,” Solid-State Electron., vol. 12, pp. 573–589, 1969.
    • (1969) Solid-State Electron. , vol.12 , pp. 573-589
    • Grebene, A.B.1    Ghandhi, S.K.2
  • 17
    • 0001495342 scopus 로고
    • Characteristics of junction field effect devices with small channel length-to-width ratios
    • J. R. Hauser, “Characteristics of junction field effect devices with small channel length-to-width ratios,” Solid-State Electron., vol. 10, pp. 577–587, 1967.
    • (1967) Solid-State Electron. , vol.10 , pp. 577-587
    • Hauser, J.R.1
  • 18
    • 84938439024 scopus 로고    scopus 로고
    • Long-term drift of GaAs MESFET characteristics and its dependence on substrate with buffer layer
    • T. Itoh and H. Yanai, “Long-term drift of GaAs MESFET characteristics and its dependence on substrate with buffer layer,” in Proc. 1978 Int. Symp. Gallium Arsenide and Related Compounds, pp. 326–334.
    • Proc. 1978 Int. Symp. Gallium Arsenide and Related Compounds , pp. 326-334
    • Itoh, T.1    Yanai, H.2
  • 19
    • 0017982108 scopus 로고
    • Deep trapping effects at the GaAs-GaAs: Cr interface in GaAs FET structures
    • June
    • Y. M. Houng and G. L. Pearson, “Deep trapping effects at the GaAs-GaAs: Cr interface in GaAs FET structures,” J. Appl. Phys., vol. 49, pp. 3348–3352, June 1978.
    • (1978) J. Appl. Phys. , vol.49 , pp. 3348-3352
    • Houng, Y.M.1    Pearson, G.L.2
  • 20
    • 0016081559 scopus 로고
    • Deep-level transient spectroscopy: A new method to characterize traps in semiconductors
    • July
    • D. V. Lang, “Deep-level transient spectroscopy: A new method to characterize traps in semiconductors,” J. Appl. Phys., vol. 45, pp. 3023–3032, July 1974.
    • (1974) J. Appl. Phys. , vol.45 , pp. 3023-3032
    • Lang, D.V.1
  • 21
    • 0242359392 scopus 로고
    • Electrical traps in GaAs microwave F.E. T. s
    • June
    • M. G. Adlerstein, “Electrical traps in GaAs microwave F.E. T. s,” Electron. Lett., vol. 12, p. 297, June 1976.
    • (1976) Electron. Lett. , vol.12 , pp. 297
    • Adlerstein, M.G.1
  • 22
    • 84956267968 scopus 로고    scopus 로고
    • Interface effects on drain current instability in GaAs MESFETs with buffer layer
    • Tech. Dig. 1979 Int. Conf. Solid-State Devices (Tokyo 1979); to be published in
    • T. Itoh and H. Yanai, “Interface effects on drain current instability in GaAs MESFETs with buffer layer,” in Tech. Dig. 1979 Int. Conf. Solid-State Devices (Tokyo 1979); to be published in Jap. J. Appl. Phys., vol. 19, suppl. 19–1.
    • Jap. J. Appl. Phys. , vol.19 , pp. 19-21
    • Itoh, T.1    Yanai, H.2
  • 23
    • 0017542223 scopus 로고
    • Hole traps in bulk and epitaxial GaAs crystals
    • Oct.
    • A. Mitonneau, G. M. Martin, and A. Mircea, “Hole traps in bulk and epitaxial GaAs crystals,” Electron. Lett., vol. 13, p. 666, Oct. 1977.
    • (1977) Electron. Lett. , vol.13 , pp. 666
    • Mitonneau, A.1    Martin, G.M.2    Mircea, A.3
  • 24
    • 51649181242 scopus 로고
    • A study of deep levels in GaAs by capacitance spectroscopy
    • D. V. Lang and R. A. Logan, “A study of deep levels in GaAs by capacitance spectroscopy,” J. Electron. Mat., vol. 4, p. 1053, 1975.
    • (1975) J. Electron. Mat. , vol.4 , pp. 1053
    • Lang, D.V.1    Logan, R.A.2
  • 27
    • 0017982603 scopus 로고
    • Improvement of the drain breakdown voltage of GaAs power MESFET's by a simple recess structure
    • June
    • T. Furutsuka, T. Tsuji, and F. Hasegawa, “Improvement of the drain breakdown voltage of GaAs power MESFET's by a simple recess structure,” IEEE Trans. Electron Devices, vol. ED-25, pp. 563–567, June 1978.
    • (1978) IEEE Trans. Electron Devices , vol.ED-25 , pp. 563-567
    • Furutsuka, T.1    Tsuji, T.2    Hasegawa, F.3
  • 28
    • 0017983302 scopus 로고
    • Light emission and burnout characteristics of GaAs power MESFET's
    • June
    • R. Yamamoto, H. Higashisaka, and F. Hasegawa, “Light emission and burnout characteristics of GaAs power MESFET's,” IEEE Trans. Electron Devices, vol ED-25, pp. 567–573, June 1978.
    • (1978) IEEE Trans. Electron Devices , vol.ED-25 , pp. 567-573
    • Yamamoto, R.1    Higashisaka, H.2    Hasegawa, F.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.