Investigation on the drift of GaAs MESFET’s by high frequency parameters

Japanese Journal of Applied Physics

Volumn 19, Issue , 1980, Pages 357-360

  Ohata, Keiichi ^a   Itoh, Hitoshi ^a   Hasegawa, Fumio ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 4243078065     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.7567/JJAPS.19S1.357     Document Type: Article

References (7)

1. D. R. Ch’en, H. F. Cooke, J. N. Wholey and G. J. Policky: ISSCC’76 Digest of Technical Papers, p. 160.
2. K. Ohata, H. Itoh, F. Hasegawa and N. Kawamura: Record of Nat. Conv. IECE Japan, 1977, p. 3–259.
3. M. Ohtsubo, Y. Kadowaki, M. Itoh, K. Segawa, T. Oda and S. Mitsui: Record of Nat. Conv. IECE Japan, 1978, p. 2–64.
4. Y. Wada: Record of Nat. Conv. SSD Group IECE Japan, 1977, p. 83.
5. T. Itoh and H. Yanai: GaAs and Related Compounds, 1978 (The Institute of Physics, Bristol and London, 1979) p. 326.
6. H. F. Cooke: ISSCC’78 Digest of Technical Papers, p. 116.
7. T. Itoh and H. Yanai: This proceedings, p. 331.