MULTI-LAYER EPITAXIAL TECHNOLOGY FOR THE SCHOTTKY BARRIER GaAs FIELD-EFFECT TRANSISTOR.

Volumn , Issue , 1975, Pages 46-54

  Nozaki, T ^a   Ogawa, M ^a   Terao, H ^a   Watanabe, H ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT - MANUFACTURE;

GALLIUM ARSENIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0016601075     PISSN: None     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (5)