Structural and optical properties of InGaAs ridge quantum wire arrays with sub-micron pitches grown by selective MBE on InP substrates

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 4 B, 2002, Pages 2683-2688

  Jiang, Chao ^a   Muranaka, Tsutomu ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

Cathodoluminescence; Effective wire width; Linear arrays; Photoluminescence; Ridge quantum wire; Structural uniformity; Transmission electron microscopy; Wire pitch

Indexed keywords

ATOMIC FORCE MICROSCOPY; CATHODOLUMINESCENCE; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR QUANTUM WIRES; TRANSMISSION ELECTRON MICROSCOPY;

EFFECTIVE WIRE WIDTH; LINEAR ARRAYS; RIDGE QUANTUM WIRE; STRUCTURAL UNIFORMITY; WIRE PITCH;

INDIUM COMPOUNDS;

EID: 0013272707     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.2683     Document Type: Article

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