Radiative recombination mechanisms in high brightness nichia blue leds

Solid-State Electronics

Volumn 41, Issue 2 SPEC. ISS., 1997, Pages 155-157

  Osiński, Marek ^a   Eliseev, Petr G ^a,b  

^a UNIVERSITY OF NEW MEXICO   (United States)

^b LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CHARGE CARRIERS; ELECTRON TRANSITIONS; HETEROJUNCTIONS; LIGHT EMISSION; PHONONS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS;

DONOR ACCEPTOR PAIRS; NICHIA LIGHT EMITTING DIODES (LED); PHONON COUPLING STRENGTH; RADIATIVE RECOMBINATION MECHANISMS; ZERO PHONON LINE POSITION;

LIGHT EMITTING DIODES;

EID: 0031076175     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0038-1101(97)82547-6     Document Type: Article

References (7)

1. S. Nakamura, J. Cryst. Growth 145, 911 (1994).
2. M. Osiński, B. Fluegel, G. Mohs, P.-C. Chiu, B. S. Phillips and N. Peygambarian, Techn. Digest, Tenth International Conf. on Integrated Optics & Optical Fibre Commun. IOOC-95, Hong Kong, 26-30 June 1995, Vol. 3, Paper ThD3-4, pp. 116-117.
3. H. Amano, T. Tanaka, Y. Kunii, K. Kato, S. T. Kim and I. Akasaki, Appl. Phys. Lett. 64, 1377 (1994).
4. M. A Khan, S. Krishnankutti, R. A. Skogman, J. N. Kuznia and D. T. Olson, Appl. Phys. Lett. 65, 520 (1994).
5. B. Monemar, O. Lagerstedt and H. P. Gislason, J. Appl. Phys. 51, 625 (1980).
6. J. I. Pankove, J. E. Birkeyheiser and E. A. Miller, J. Appl. Phys. 45, 1280 (1974).
7. M. R. H. Khan, Y. Ohshita, N. Sawaki and I. Akasaki, Solid State Commun. 57, 405 (1986).