Ultrahigh vacuum arcjet nitrogen source for selected energy epitaxy of group III nitrides by molecular beam epitaxy

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 3, 1998, Pages 1615-1620

  Grunthaner, F J ^a   Bicknell Tassius, R ^a   Deelman, P ^a   Grunthaner, P J ^a   Bryson, C ^b   Snyder, E ^b   Giuliani, J L ^c   Apruzese, J P ^c   Kepple, P ^c  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b Surface/Interface Inc   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE SPECIES; ARC-JET PLASMA; ATOMIC NITROGEN; BOND STRENGTH; COMPOUND SEMICONDUCTORS; DIFFERENTIAL PUMPING; DINITROGEN; DIRECT REACTIONS; DOUBLET STATE; ELECTRICALLY ACTIVE DEFECTS; ELECTRON ENERGIES; ELECTRON FLUX; ELECTRON SPECTRUM; ELECTRON-IMPACT EXCITATION; EXCITED IONS; GROUP III; GROUP III NITRIDES; GROWTH CHAMBER; ION ENERGY DISTRIBUTIONS; ION FLUXES; ION KINETIC ENERGY; IONIC SPECIES; LOCAL THERMODYNAMIC EQUILIBRIUM; LOWER ENERGIES; MBE GROWTH; METAL CONTAMINANTS; MOLECULAR BEAM EPITAXIAL; NITROGEN IONS; NITROGEN SOURCES; OPTICAL EMISSION SPECTRA; OPTICAL SPECTRA; POWER LEVELS; QUADRUPOLE MASS; SAMPLE LOCATION; SELECTIVE EXCITATIONS; TECHNICAL CHALLENGES; THEORETICAL STUDY; THERMAL EXCITATION; THORIATED TUNGSTEN; TWO STAGE; VISIBLE DEGRADATION;

ATOMIC SPECTROSCOPY; ATOMS; CRYSTAL GROWTH; CYCLOTRONS; DISSOCIATION; ELECTRIC ARCS; ELECTRON ENERGY LEVELS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRONS; EMISSION SPECTROSCOPY; GALLIUM NITRIDE; IMPACT IONIZATION; ION SOURCES; IONIZATION OF GASES; IONS; KINETIC ENERGY; MASS SPECTROMETRY; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MONOLAYERS; NITROGEN; PHOTODEGRADATION; REFRACTORY MATERIALS; SEMICONDUCTOR GROWTH; TUNGSTEN; ULTRAHIGH VACUUM; WIRELESS TELECOMMUNICATION SYSTEMS;

NITROGEN PLASMA;

EID: 0012914237     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581129     Document Type: Article

References (19)

1. F. A. Ponce and D. P. Bour, Nature (London) 386, 351 (1997).
2. D. A. Neumayer and J. G. Ekerdt, Chem. Mater. 8, 9 (1996).
3. B. A. Ferguson, A. Sellidj, B. B. Doris, and C. B. Mullins, J. Vac. Sci. Technol. A 14, 825 (1996).
4. W. E. Hoke, P. J. Lemonias, and D. G. Weir, J. Cryst. Growth 111, 1024 (1991).
5. R. W. McCullough, J. Geddes, J. A. Croucher, J. M. Woolsey, D. P. Higgins, M. Schlapp, and H. B. Gilbody, J. Vac. Sci, Technol. A. 14, 152 (1996).
6. R. J. Moinar and T. D. Moustakas, J. Appl. Phys. 76, 4587 (1994).
7. B. Tsai and W. A. Goddard III (to be published).
8. R. G. Jahn, Physics of Electric Propulsion (New York, McGraw-Hill, 1968).
9. M. A. D. Fluendy and K. P. Lawley, Chemical Applications of Molecular Beam Scattering (Chapman and Hall, London, 1973), Chap. 8.
10. Surface/Interface Inc., 260 Santa Ana Court, Sunnyvale, CA 94086.
11. R. W. Kessler and B. Koglin, Rev. Sci. Instruin. 37, 6682 (1966).
12. R. P. Vaudo, Z. Yu, J. W. Cook, and J. F. Schetzina, Opt. Lett. 18, 1843 (1993).
13. R. J. Lee, F. M. Rupley, and J. A. Miller, Chemkin-II: A Fortran Chemical. Kinetics Package for Analysis of Gas-Phase Chemical Kinetics, Report No. SAND89-8009 (1990).
14. R. J. Lee, F. M. Rupley, and J. A. Miller, The Chemkin Thermodynamic Data Base, Report. No. SAND87-8215B (1990).
15. J. P. Apruzese, J. Davis, D. Duston, and R. W. Clark, Phys. Rev. A 29, 246 (1983).
16. R. W. Clark, J. Davis, J. P. Apruzese, and J. L. Giuliani, J. Quant. Spectrosc. Radiat. Transf. 53, 307 (1995).
17. J. P. Apruzese, J. Quant. Spectrosc. Radiat. Transf. 25, 419 (1981).
18. K. D. Sevier, Low Energy Electron Spectrometry (Wiley, New York, 1972).
19. J. A. Simpson, Rev. Sci, Instruin. 32, 1283 (1961).