Interfaces in Si/Ge atomic layer superlattices on (001)Si: Effect of growth temperature and wafer misorientation

Journal of Applied Physics

Volumn 80, Issue 3, 1996, Pages 1450-1459

  Baribeau, J M ^a   Lockwood, D J ^a   Syme, R W G ^a,b  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b UNIVERSITY OF CANTERBURY   (New Zealand)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005929009     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363013     Document Type: Article

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