157 nm lithography with high numerical aperture lens for the 70 nm technology node

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4691, Issue 1, 2002, Pages 584-593

  Suganaga, Toshifumi ^a   Kanda, Noriyoshi ^a   Kim, Jae Hwan ^a   Yamabe, Osamu ^a   Watanabe, Kunio ^a   Furukawa, Takamitsu ^a   Miyoshi, Seiro ^a   Itani, Toshiro ^a   Cashmore, Julian ^a   Gower, Malcolm ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIREFRINGENCE; COMPUTER SIMULATION; LASERS; MASKS; OPTICAL INSTRUMENT LENSES; OPTICAL RESOLVING POWER; PROJECTION SYSTEMS; SEMICONDUCTOR DEVICES;

NUMERICAL APERTURE (NA) LENSES;

PHOTOLITHOGRAPHY;

EID: 0012737847     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.474606     Document Type: Article

References (6)

1. M. Toriumi, S. Ishikawa, S. Miyoshi, T. Naito, T. Yamazaki, M. Watanabe and T. Itani, Proc. SPIE 4345, 371 (2001).
2. I. Satou, M. Watanabe, H. Watanabe and T. Itani, Proc. SPIE 4345, 361 (2001).
3. T. Matsuo, T. Onodera, T. Itani and H. Morimoto, Proc. SPIE 4186, 268 (2000).
4. T. Onodera, T. Matsuo, T. Itani and H. Morimoto, Proc. SPIE 4346, 61 (2001).
5. 2 Birefringence Workshop, San Francisco, July 2001.
6. 2 Birefringence Workshop, San Francisco, July 2001.