Quantitative metrology study of Cu/SiO2 interconnect structures using fluorescence x-ray microscopy

Applied Physics Letters

Volumn 78, Issue 6, 2001, Pages 820-822

  Xu, Guangyong ^a   Su, X ^a   Stagarescu, C B ^a   Eastman, D E ^a   Lai, B ^b   Cai, Z ^b   Noyan, I C ^c   Hu, C K ^c  

^a UNIVERSITY OF CHICAGO   (United States)

^b ARGONNE NATIONAL LABORATORY   (United States)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012700889     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1339996     Document Type: Article

References (10)

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8. C.-K. Hu, D. C. Edelstein, and C. Uzoh, in Third International Workshop on Stress-Induced Phenomena in Metallizations (American Institute of Physics, New York, 1996), p. 153.
9. W. Yun, B. Lai, Z. Cai, J. Maser, D. Legnini, E. Gluskin, Z. Chen, A. A. Krasnoperova, Y. Vladimirsky, F. Cerrina, E. Di Fabrizio, und M. Gentili, Rev. Sci. Instrum. 70, 2238 (1999).
10. X. Su, C. Stagarescu, G. Xu, D. F. Eastman, I. Mcnulty, S. P. Frigo, Yuxin Wang, Cornelia C. Retsch, I. C. Noyau, and C. K. Hu, Appl. Phys. Lett. 77, 3465 (2000).