Defect-related luminescence of Mg-doped n-GaN grown by hydride vapour-phase epitaxy

Journal of Physics Condensed Matter

Volumn 10, Issue 48, 1998, Pages 11103-11110

  Lee, Chul ^a   Kim, Jae Eun ^a   Park, Hae Yong ^a   Kim, S T ^b   Lim, H ^c  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Daejon National University of Technology   (South Korea)

^c Ajou University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012323573     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/10/48/029     Document Type: Article

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