-
1
-
-
0031337131
-
Materials and production characterization requirements for the production of FRAM® memory products
-
T. D. Hadnagy, "Materials and production characterization requirements for the production of FRAM® memory products", Integrated Ferroelectrics, 18, pp. 1-47, 1997.
-
(1997)
Integrated Ferroelectrics
, vol.18
, pp. 1-47
-
-
Hadnagy, T.D.1
-
2
-
-
0029368986
-
Aanlysis ofthe resistance degradation of SrTiO3 and BaSr1TiO3 thin films
-
K. Numata, Y. Fukuda, K. Aoki, et al, "Aanlysis ofthe resistance degradation of SrTiO3 and BaSr1TiO3 thin films", Jpn. I Appi. Phys. 34(9B), pp. 5245-5249, 1995.
-
(1995)
Jpn. i Appi. Phys
, vol.34
, Issue.9 B
, pp. 5245-5249
-
-
Numata, K.1
Fukuda, Y.2
Aoki, K.3
-
3
-
-
0027668451
-
Dielectric properties of(Ba, Sr)Ti03 thin films deposited by RF sputtering
-
T. Horikawa, N. Mikami, T. Makita, et al, "Dielectric properties of(Ba, Sr)Ti03 thin films deposited by RF sputtering", Jpn. I Appi. Phys. 32(9B), pp. 4l26-413O, 1993.
-
(1993)
Jpn. i Appi. Phys
, vol.32
, Issue.9
, pp. 4l26-4130
-
-
Horikawa, T.1
Mikami, N.2
Makita, T.3
-
4
-
-
0028513241
-
Fabrication ofPbTiO3 thin films on TiSi2/Si and their characterization
-
N. Yahagi, H. Hatano, S. Okamura, et al, "Fabrication ofPbTiO3 thin films on TiSi2/Si and their characterization", Jpn. I Appi. Phys. 33(9B), pp. 5227-5230, 1994.
-
(1994)
Jpn. i Appi. Phys
, vol.33
, Issue.9 B
, pp. 5227-5230
-
-
Yahagi, N.1
Hatano, H.2
Okamura, S.3
-
5
-
-
0028508226
-
Study on Pb-based ferroelectric thin films by sol-gel method
-
Y. Nakao, T. Nakamura, A. Kamisawa, et al, "Study on Pb-based ferroelectric thin films by sol-gel method", Jpn. I Appi. Phys. 32(9B):, pp. 5265-5267, 1993.
-
(1993)
Jpn. i Appi. Phys
, vol.32
, Issue.9 B
, pp. 5265-5267
-
-
Nakao, Y.1
Nakamura, T.2
Kamisawa, A.3
-
6
-
-
0028508274
-
Preparation and properties ofru and ru02 thin film electrodes for ferroelec-tric thin films
-
H. Maiwa, N. Ichinose and K. Okazaki, "Preparation and Properties ofRu and Ru02 Thin Film Electrodes for Ferroelec-Tric Thin Films", Jpn. J. Appl. Phys., 33(9B), pp. 5223-5226, 1994.
-
(1994)
Jpn. J. Appl. Phys
, vol.33
, Issue.9 B
, pp. 5223-5226
-
-
Maiwa, H.1
Ichinose, N.2
Okazaki, K.3
-
7
-
-
0031696433
-
Annealing ofruo2 and ru bottom electrodes and its effects on the electrical properties of(ba,sr)ti03 thin films
-
J. H. Ahn, W. Y. Choi, W. J. Lee, et al, "Annealing ofRuO2 and Ru Bottom Electrodes and Its Effects on the Electrical Properties of(Ba,Sr)Ti03 Thin Films", Jpn. J. Appl. Phys., 37(1), pp. 284-289, 1998.
-
(1998)
Jpn. J. Appl. Phys
, vol.37
, Issue.1
, pp. 284-289
-
-
Ahn, J.H.1
Choi, W.Y.2
Lee, W.J.3
-
8
-
-
0032314854
-
Effects of bottom electrodes on the leakage properties of sputtered bst thin films
-
J. H. Ahn, W. Y. Choi, W. J. Lee, et al, "Effects of Bottom Electrodes on the Leakage Properties of Sputtered BST Thin Films", Integrated Ferroelectrics, 21, pp. 185-495, 1998.
-
(1998)
Integrated Ferroelectrics
, vol.21
, pp. 185-495
-
-
Ahn, J.H.1
Choi, W.Y.2
Lee, W.J.3
-
9
-
-
0031271207
-
Dielectric properties of(ba,sr)ti03 thin films and their correlation with oxygen vacancy density
-
Y. Fukuda, H. Haneda, I. Sakaguchi, et al, "Dielectric Properties of(Ba,Sr)Ti03 Thin Films and Their Correlation with Oxygen Vacancy Density". Jpn. J. Appl. Phys., 36(11B), pp.L15 14-L15 16, 1997.
-
(1997)
Jpn. J. Appl. Phys
, vol.36
, Issue.11 B
, pp. L1514-L1516
-
-
Fukuda, Y.1
Haneda, H.2
Sakaguchi, I.3
-
10
-
-
0029370884
-
Dielectric relaxation of(ba,sr)ti03 thin films
-
T. Horikawa, T. Makita, T. Kuroiwa, et al, "Dielectric Relaxation of(Ba,Sr)Ti03 Thin Films", Jpn. J. Appl. Phys., 34(9B), pp. 5478-5482, 1995.
-
(1995)
Jpn. J. Appl. Phys
, vol.34
, Issue.9 B
, pp. 5478-5482
-
-
Horikawa, T.1
Makita, T.2
Kuroiwa, T.3
|