Epitaxial growth of 3C-SiC without carbonization process using 1,3-disilabutane

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 175-178

  Lee, K W ^a   Yu, K S ^a   Bae, J W ^a   Kim, Y ^a  

^a Korea Research Institute of Chemical Technology   (South Korea)

Author keywords

1,3 Disilabutane; Single Precursors; Single Source CVD

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SURFACE STRUCTURE; THERMAL EFFECTS; X RAY CRYSTALLOGRAPHY;

DISILABUTANE; SINGLE PRECURSORS;

SILICON CARBIDE;

EID: 3743059296     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

References (10)

1. K. Shibahara, S. Nishino and H. Matsunami, J. Crystal Growth 78 (1986), p. 538.
2. M. I. Chaudhry and R. L. Wright, J. Mater. Res. 5 (1990), p. 1595.
3. K. Ikoma, M. Yamanaka, H. Yamaguchi and Y. Shichi, J. Electrochem. Soc. 138 (1991), p. 3028.
4. I. Golecki, F. Reidinger and J. Marti, Appl. Phys. Lett. 60 (1992), p. 1703.
5. K. Takahashi, S. Nishino and J. saraie, J. Electrochem. Soc. 139 (1992), p. 3565.
6. A. J. Steckl, C. Yuan, J. P. Li and M. J. Loboda, Appl. Phys. Lett. 63 (1993), p. 3347.
7. C. Yuan, A. J. Steckl and M. J. Loboda, Appl. Phy. Lett. 64 (1994), p. 3000.
8. K.-W. Lee, K.-S. Yu, J.-H. Boo, Y. Kim, T. Hatayama, T. Kimoto and H. Matsunami, J. Electrochem. Soc. 144 (1997), p. 1474.
9. A. D. Johnson, J. Perrin, J. A. Mucha and D. E. Ibbotson, J. Phys. Chem. 97 (1993) p. 12937.
10. A. T. S. Wee, Z. C. Feng, H. H. Hng, K. L. Tan, C. C. Tin, R. Hu and R. Coston, Appl. Surface Sci. 81 (1994), p.377.