Photoelectric properties of HgMnTe photodiodes with ion etched p-n junctions

Opto-Electronics Review

Volumn 8, Issue 3, 2000, Pages 251-262

  Kosyachenko, L A ^a   Rarenko, I M ^a   Weiguo, S ^b   Zengxiong, L ^b   Qibing, G ^b  

^a CHERNIVTSI NATIONAL UNIVERSITY   (Ukraine)

^b Optoelectronics Institute   (China)

Author keywords

HgMnTe photodiodes; Infrared detectors; Photoelectric properties

Indexed keywords

EID: 0010870948     PISSN: 12303402     EISSN: 18963757     Source Type: Journal    
DOI: None     Document Type: Article

References (25)

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