Anodic fluoride on HgMnTe

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 15, Issue 4, 1997, Pages 2202-2206

  Weiguo, Sun ^a   Kosyachenko, L A ^b   Rarenko, I M ^b  

^a Luoyang Optoelectronics Institute   (China)

^b CHERNIVTSI NATIONAL UNIVERSITY   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000400982     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580534     Document Type: Article

References (9)

1. A. Rogalski, Infrared Phys. 31, 117 (1991).
2. M. M. Miroshnikov, Proc. SPIE 1540, 372 (1991).
3. P. Becla, J. Vac. Sci. Technol. A 4, 2014 (1986).
4. Y. Nemirovsky, J. Vac. Sci. Technol. A 8, 1185 (1990).
5. S. Weiguo and W. Bin, J. Cryst. Growth 117, 1183 (1992).
6. Y. Nemirovsky and L. Burstein, Appl. Phys. Lett. 44, 443 (1984).
7. E. Weiss and N. Mainzer, J. Vac. Sci. Technol. A 6, 2765 (1988).
8. Y. Nemirovsky and G. Bahir, J. Vac. Sci. Technol. A 7, 454 (1989).
9. D. Eger and A. Zigelman, Proc. SPIE 1484, 48 (1991).