Electrical properties of Hg1-xMnxTe-based photodiodes

Semiconductors

Volumn 33, Issue 12, 1999, Pages 1293-1296

  Kosyachenko, L A ^a   Rarenko, I M ^a   Bodnaruk, O A ^a   Weiguo, Sun ^b  

^a CHERNIVTSI NATIONAL UNIVERSITY   (Ukraine)

^b Institute of Optoelectronic   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033475384     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187910     Document Type: Article

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