Charge transport mechanisms in HgMnTe photodiodes with ion etched p-n junctions

Solid-State Electronics

Volumn 44, Issue 7, 2000, Pages 1197-1202

  Kosyachenko, L A ^a   Rarenko, I M ^a   Weiguo, Sun ^b   Xiong, Lu Zheng ^b  

^a CHERNIVTSI NATIONAL UNIVERSITY   (Ukraine)

^b Optoelectronics Institute   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; DIFFUSION IN SOLIDS; ETCHING; INFRARED DETECTORS; MAGNESIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; SINGLE CRYSTALS;

ION ETCHING;

PHOTODIODES;

EID: 0033753031     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00036-8     Document Type: Article

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