Fabrication process for 256 × 256 bolometer-type uncooled infrared detector

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3224, Issue , 1997, Pages 40-51

  Wada, Hideo ^a   Nagashima, Mitsuhiro ^a   Kanzaki, Masayuki ^b   Sasaki, Tokuhito ^b   Kawahara, Akihiro ^b   Tsuruta, Yoshio ^b   Oda, Naoki ^b   Matsumoto, Shouhei ^b  

^a JAPAN DEFENSE AGENCY   (Japan)

^b NEC CORPORATION   (Japan)

Author keywords

Bolometer; Infrared; Microbridge; Micromachining; Spectral response; Uncooled

Indexed keywords

BOLOMETERS; COMPOSITE MICROMECHANICS; DETECTORS; ETCHING; INFRARED DETECTORS; INTEGRATED CIRCUITS; MACHINING; MICROMACHINING; OPTICAL DEVICES; OXIDES; PASSIVATION; PIXELS; TRANSITION METALS; VANADIUM; VANADIUM ALLOYS; VANADIUM COMPOUNDS;

CAVITY STRUCTURES; DAMAGE-FREE; DEPOSITION PROCESSES; DETECTOR ARRAYS; DRYING CONDITIONS; FABRICATION PROCESSES; IN VACUUMS; INFRARED; INTERFERENCE CHARACTERISTICS; MICROBRIDGE; PASSIVATION LAYERS; READ OUT INTEGRATED CIRCUITS; RESPONSIVITY MEASUREMENTS; SACRIFICIAL LAYERS; SPECTRAL RESPONSE; TEMPERATURE COEFFICIENT OF RESISTANCES; THERMAL CONDUCTANCES; TIME CONSTANTS; UNCOOLED; UNCOOLED INFRARED; UNCOOLED INFRARED DETECTORS; VANADIUM OXIDE FILMS; VANADIUM OXIDES; WAVELENGTH RANGES;

OXIDE FILMS;

EID: 0010697883     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.284539     Document Type: Conference Paper

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