Effect of gas ambient on improvement in emission behavior of Si field emitter arrays

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 2, 1998, Pages 799-802

  Takai, Mikio ^a   Morimoto, Hiroji ^a   Hosono, Akihiko ^b   Kawabuchi, Shinji ^b  

^a OSAKA UNIVERSITY   (Japan)

^b MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0010559580     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589908     Document Type: Article

References (6)

1. See, for example, Q. Li, J. F. Xu, H. B. Song, X. F. Liu, and W. P. Kang, J. Vac. Sci. Technol. B 14, 1889 (1996).
2. M. Takai, M. Yamashita, H. Wille, S. Yura, S. Horibata, and M. Ototake, Appl. Phys. Lett. 66, 422 (1995).
3. H. Morimoto, M. Yamashita, T. Kishimoto, M. Takai, S. Yura, A. Hosono, S. Okuda, S. Lipp, L. Frey, and H. Ryssel, Jpn. J. Appl. Phys. 35, 6623 (1996).
4. M. Takai, T. Kishimoto, M. Yamashita, H. Morimoto, S. Yura, A. Hosono, S. Okuda, S. Lipp, L. Frey, and H. Ryssel, J. Vac. Sci. Technol. B 14, 1973 (1996).
5. M. Takai, H. Morimoto, T. Kishimoto, S. Tura, A. Hosono, and S. Okuda, in Proceedings of the 9th International Vacuum Microelectronics Conference, 8-11 July 1996, St. Petersburg, Russia, p. 657.
6. S. Meassick and H. Champaign, J. Vac. Sci. Technol. B 14, 1914 (1996).