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Volumn 3050, Issue , 1997, Pages 80-92

Survey of scanning electron microscopes using quantitative resolution evaluation

Author keywords

Critical Dimension (CD); Microporous silicon; Resolution; Scanning Electron Microscope (SEM); Two Dimensions Fast Fourier Transform (2D FFT)

Indexed keywords

DATA STORAGE EQUIPMENT; ELECTRON MICROSCOPES; ELECTRONS; FAST FOURIER TRANSFORMS; IMAGE ANALYSIS; MICROPOROSITY; POROUS SILICON; SCANNING; SCANNING ELECTRON MICROSCOPY;

EID: 0010361534     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.275930     Document Type: Conference Paper
Times cited : (4)

References (9)
  • 1
    • 62249191488 scopus 로고    scopus 로고
    • ASTM. 1986 Standard practice for scanning electron microscope performance characterization. ASTM Standards Designation : E 766-86. American Society for Testing and Materials, 1916 Race Street, Philadelphia? PA 19103.
    • ASTM. 1986 Standard practice for scanning electron microscope performance characterization. ASTM Standards Designation : E 766-86. American Society for Testing and Materials, 1916 Race Street, Philadelphia? PA 19103.
  • 3
    • 0029425467 scopus 로고    scopus 로고
    • H. Martin, P. Perret, C. Desplat, P. Reisse, New approach in scanning electron microscope resolution evaluation, in Integrated Circuit Metrology, Inspection and Process Control IX, Marylyn H. Bennett, Editor, Proc. SPIE 2439, 310-318, SPIE, Bellingham WA, 1995.
    • H. Martin, P. Perret, C. Desplat, P. Reisse, "New approach in scanning electron microscope resolution evaluation", in Integrated Circuit Metrology, Inspection and Process Control IX, Marylyn H. Bennett, Editor, Proc. SPIE 2439, 310-318, SPIE, Bellingham WA, 1995.
  • 7
    • 0026360399 scopus 로고    scopus 로고
    • J. P. Gonchond, A. Halimaoui, K. Ogura, High resolution SEM study of Porous silicon, in Proceedings of the Microscopy of Semiconductor Material Conference, 117, Section 4, 235-238, Institute of Physics Conference Series, Oxford UK, 1991.
    • J. P. Gonchond, A. Halimaoui, K. Ogura, "High resolution SEM study of Porous silicon", in Proceedings of the Microscopy of Semiconductor Material Conference, Volume # 117, Section 4, 235-238, Institute of Physics Conference Series, Oxford UK, 1991.
  • 8
    • 0010319705 scopus 로고    scopus 로고
    • Processing independent photoluminescence response of chemically etched porous silicon
    • M. J. Winton, S. D. Russel, J. A. Wolk, R. Gronsky, "Processing independent photoluminescence response of chemically etched porous silicon", Applied Physics Letter, Vol. 69, # 26, 4026-4028, 1996.
    • (1996) Applied Physics Letter , vol.69 , Issue.26 , pp. 4026-4028
    • Winton, M.J.1    Russel, S.D.2    Wolk, J.A.3    Gronsky, R.4
  • 9
    • 0019343143 scopus 로고
    • Les effets du bombardement electronique en spectroscopie d'electrons et en microscopie electronique a balayage
    • J. M. Fontaine, C. Le Gressus, "Les effets du bombardement electronique en spectroscopie d'electrons et en microscopie electronique a balayage",in Le vide et les couches minces, 1981 (205), 11-36, 1981.
    • (1981) Le vide et les couches minces , Issue.205 , pp. 11-36
    • Fontaine, J.M.1    Le Gressus, C.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.