Infrared electroluminescence from metal-oxide-semiconductor structures on silicon

Journal of Physics Condensed Matter

Volumn 12, Issue 11, 2000, Pages

  Lin, Ching Fuh ^a   Liu, C W ^a   Chen, Miin Jang ^a   Lee, M H ^a   Lin, I C ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0009728472     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/12/11/101     Document Type: Review

References (19)

1. Takato N, Jinguji K, Yasu M, Toba H and Kawachi M 1988 IEEE J. Lightwave Technol. 6 1003
2. Wu M C, Lin L-Y, Lee S-S and Pister K S J 1995 Sensors Actuators A 50 127
3. Canham L T 1990 Appl. Phys. Lett. 57 1046
4. Koshida N and Koyama H 1992 Appl. Phys. Lett. 60 347
5. Lazarouk S, Jaguiro P, Katsouba S, Masini G, La Monica S, Maiello G and Ferrari F 1996 Appl. Phys. Lett. 68 2108
6. Schuppler S et al 1995 Phys. Rev. B 52 4910
7. Geohegan D B, Puretzky A A, Duscher G and Pennycook S J 1998 Appl. Phys. Lett. 73 438
8. Liao L S, Bao X-M, Zheng X-Q, Li N-S and Min N-S 1996 Appl. Phys. Lett. 68 850
9. Skorupa W, Yankov R A, Tyschenko I E, Frob H, Bohme T and Leo K 1996 Appl. Phys. Lett. 68 2410
10. Wang Y Q, Zhao T P, Liu J and Qin GG 1999 Appl. Phys. Lett. 74 3815
11. Yuan J and Haneman D 1999 J. Appl. Phys. 86 2358
12. Chang C Y and Sze S (ed) 1996 ULSI Technology (New York: McGraw-Hill)
13. Sze S M 1981 Physics of Semiconductor Devices (New York: Wiley)
14. Bai G F, Wang Y Q, Ma Z C, Zong W H and Qin G G 1998 J. Phys.: Condens. Matter 10 L717
15. Griscom D L 1991 J. Ceram. Soc. Jpn 99 899
16. Jaros M and Beavis A W 1993 Appl. Phys. Lett. 63 669
17. Casey Jr H C and Panish M B 1978 Heterostructure Lasers Part A (Orlando: Academic Press)
18. Bude J, Sano N and Yoshii A 1992 Phys. Rev. B 45 5848
19. Carbone L, Brunetti R, Jacoboni C, Lacaita A and Fischetti M 1994 Semicond. Sci. Technol. 9 674