Enhanced electron emission from phosphorus-doped diamond-clad silicon field emitter arrays

IEEE Electron Device Letters

Volumn 17, Issue 5, 1996, Pages 208-210

  Ku, T K ^a   Chen, S H ^a   Yang, C D ^a   She, N J ^a   Wang, C C ^a   Chen, C F ^a   Hsieh, I J ^b   Cheng, H C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b CHUNG HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; DIAMOND FILMS; ELECTRON EMISSION; PHOSPHORUS; PLASMA APPLICATIONS; SEMICONDUCTING DIAMONDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; THERMAL CONDUCTIVITY OF SOLIDS;

DEFECT DENSITIES; DIAMOND CLAD MICROTIPS; ELECTRON CONDUCTIVITY; EMISSION CURRENT; SILICON FIELD EMITTER ARRAYS;

FIELD EMISSION CATHODES;

EID: 0030151050     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.491831     Document Type: Article

References (14)

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