Local recombination mechanisms in type-ii gaas/alas superlattices: the role of temperature-dependent transport processes

Physical Review B - Condensed Matter and Materials Physics

Volumn 59, Issue 24, 1999, Pages 15862-15867

  Luerssen D ^a   Oehler, A ^a   Bleher, R ^a   Kalt, H ^a  

^a UNIVERSITY OF KARLSRUHE   (Germany)

Author keywords

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Indexed keywords

EID: 0009398246     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.59.15862     Document Type: Article

References (19)

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16. For temperatures of 40 K and above, we find a saturation of this behavior. Here, additional effects like an activated increase of the hole mobility become important.
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