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Volumn 58, Issue 8, 1998, Pages R4242-R4245

Voltage-controlled sharp-line electroluminescence in GaAs-AlAs double-barrier resonant-tunneling structures

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Indexed keywords


EID: 0542443284     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.58.R4242     Document Type: Article
Times cited : (3)

References (16)
  • 9
    • 0028407169 scopus 로고
    • A. Nogaret et al., in Proceedings of the 23rd International Conference on the Physics of Semiconductors, Berlin, 1996, edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996), p. 2059
    • Electron tunneling below the E1 resonance may occur into disorder-induced tail states in the QW, or as a result of excitonic interactions between emitter electrons and holes in the well. See H. Buhmann et. al Solid-State Electron. 37, 973 (1994);A. Nogaret et al., in Proceedings of the 23rd International Conference on the Physics of Semiconductors, Berlin, 1996, edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996), p. 2059.
    • (1994) Solid-State Electron. , vol.37 , pp. 973
    • Buhmann, H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.