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Volumn 361-362, Issue , 1996, Pages 756-761

Optical spectroscopy of single quantum dots

Author keywords

Gallium arsenide; Molecular beam epitaxy; Quantum effects; Quantum wells; Semiconductor semiconductor heterostructures

Indexed keywords

ELECTRIC FIELDS; ELECTRON ENERGY LEVELS; EXCITONS; HETEROJUNCTIONS; MAGNETOOPTICAL EFFECTS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; QUANTUM THEORY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPY;

EID: 0030189503     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00527-4     Document Type: Article
Times cited : (9)

References (19)
  • 12
    • 30244487619 scopus 로고    scopus 로고
    • note
    • This result was obtained by numerical computation. The total shift of 43 meV is caused by a shift of the subband levels, which is 36 meV in the CB and 7 meV in the VB. Variations of the exciton binding energy can be neglected.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.