Complementarity of Drain Current Transient Spectroscopy (DCTS) and G.R. Noise analysis to detect traps in HEMTs

European Solid-State Device Research Conference

Volumn , Issue , 1996, Pages 1005-1008

  Saysset, N ^a   Labat, N ^a   Touboul, A ^a   Danto, Y ^a   Dumas, J M ^b  

^a UNIVERSITÉ BORDEAUX 1   (France)

^b UNIVERSITY OF LIMOGES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT TRANSIENT; NOISE ANALYSIS;

EID: 0006898524     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. N. Saysset, N. Labat, A. Touboul, Y. Danto and J.M. Dumas, -Quality evaluation of S-HEMTs and PM-HEMTs by drain current transients and LF channel noise analysis, Proc. of ESREF'95 France, pp 389-394, 1995.
2. C.I. Canali, P. Cova, E. De Bortoli, F. Fantini, G. Meneghesso, R. Menozzi, E. Zanoni, -Enhancement and degradation of drain current in pseudomorphic AlGaAs/InGaAs HEMT's induced by hot-electrons, Proc. of IRPS, Las Vegas USA, pp 205-211, 1995.
3. K. Hikosaka, T. Mimura and S. Hiyamizu, -Deep electron traps in MBE-grown AlGaAs ternary alloy for heterojunction devices, Proc. of Conf, on Gallium Arsenide and Related Compounds Japan, pp 233-238, 1981.
4. P. Audren, J.M. Dumas, M.P. Favennec, S. Mottet, -Etude des pièges dans les transistors à haute mobilité électronique sur GaAs à l'aide de la méthode dite de relaxation isotherme. Corrélation avec les anomalies de fonctionnement, J. Phys. HI (FVance) 3, pp 185-206, 1993.