Effects of RF life-test on LF electrical parameters of GaAs power MESFETs

Microelectronics Reliability

Volumn 39, Issue 6-7, 1999, Pages 1061-1066

  Saysset Malbert, N ^a   Lambert, B ^a   Maneux, C ^a   Labat, N ^a   Touboul, A ^a   Danto, Y ^a   Vandamme, L K J ^b   Huguet, P ^c   Auxemery, P ^c   Garat, F ^d  

^a UNIVERSITÉ BORDEAUX 1   (France)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c United Monolithic Semiconductors GmbH   (Germany)

^d EUROPEAN SPACE AGENCY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; GATES (TRANSISTOR); HEAT RESISTANCE; INTEGRATED CIRCUIT TESTING; ION IMPLANTATION; POWER ELECTRONICS; RELIABILITY; SPECTROSCOPY; SPURIOUS SIGNAL NOISE;

DRAIN CURRENT TRANSIENT SPECTROSCOPY; DRAIN NOISE ANALYSIS; DYNAMIC EVALUATION CIRCUIT; ELECTRICAL CHARACTERIZATION; GAIN COMPRESSION; LIFE TEST CONDITIONS; POWER MESFETS;

MESFET DEVICES;

EID: 0033143158     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(99)00147-X     Document Type: Article

References (4)

1. nd ESA Electronic Components Conference (1993) pp 77-79
2. J.L. Muraro, F. Coppel, G. Gregoris, P.G. Tizien, J.L. Roux, J. Graffeuil, R. Plana, GaAs power MMICs : a design methodology for reliability, Proc. of ESREF 97, Bordeaux - France, Microelectronics Reliability, (1997) Vol 37, pp. 1651-1654,
3. N. Saysset, N. Labat, A. Touboul, Y. Danto, "Complementary of drain current transient spectroscopy (DCTS) and G.R. noise analysis to detect traps in HEMTs" Proc. of ESSDERC'96, Bologna - Italy, (1996), pp 1005-1008,
4. L.K.J. Vandamme, D. Rigaud, J.M. Peransin, R. Alabedra, J.M. Dumas, "Gate current 1/f noise in GaAs MESFET's", IEEE Trans, on El. Dev., Vol. 35, No7, (1988)