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Volumn 35, Issue 2 SUPPL. B, 1996, Pages 882-886
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Experimental study of impact ionization phenomena in sub-0.1 μm Si metal-oxide-semiconductor field effect transistors (MOSFETs)
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Author keywords
Electric field; Hot carrier; Impact ionization; MOS; Pocket implantation; Reliability; Si; Substrate current
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Indexed keywords
COMPUTER SIMULATION;
ELECTRIC CURRENTS;
ELECTRIC FIELDS;
ELECTRODES;
GATES (TRANSISTOR);
HOT CARRIERS;
IONIZATION OF SOLIDS;
OXIDATION;
OXIDES;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR DEVICE MANUFACTURE;
SUBSTRATES;
ARSENIC IMPLANTATION;
GATE OXIDE;
IMPACT IONIZATION;
LOCAL OXIDATION OF SILICON;
POCKET IMPLANTATION TECHNOLOGY;
POLYSILICON GATE ELECTRODES;
MOSFET DEVICES;
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EID: 0030085172
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.35.882 Document Type: Article |
Times cited : (3)
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References (10)
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