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Volumn 35, Issue 2 SUPPL. B, 1996, Pages 882-886

Experimental study of impact ionization phenomena in sub-0.1 μm Si metal-oxide-semiconductor field effect transistors (MOSFETs)

Author keywords

Electric field; Hot carrier; Impact ionization; MOS; Pocket implantation; Reliability; Si; Substrate current

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRODES; GATES (TRANSISTOR); HOT CARRIERS; IONIZATION OF SOLIDS; OXIDATION; OXIDES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES;

EID: 0030085172     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.882     Document Type: Article
Times cited : (3)

References (10)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.