Modeling ion implantation of HgCdTe

Journal of Electronic Materials

Volumn 25, Issue 8, 1996, Pages 1336-1340

  Robinson, H G ^a   Mao, D H ^a   Williams, B L ^a   Holander Gleixner, S ^a   Yu, J E ^a   Helms, C R ^a  

^a Stanford University   (United States)

Author keywords

Defect modeling; HgCdTe; Ion implantation; Process modeling

Indexed keywords

EID: 0004841237     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02655029     Document Type: Article

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