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Applied Physics A: Materials Science and Processing

Volumn 66, Issue SUPPL. 1, 1998, Pages

Use of ballistic electron emission microscopy to observe the diversity of fabricated nanometer features at the Au/Si interface

(4) Qiu, X a Shang, G a Wang, C a Bai, C a

a INSTITUTE OF CHEMISTRY (China)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED VOLTAGES; ATOMIC INTERDIFFUSION; BALLISTIC ELECTRON EMISSION MICROSCOPY; INTERFACE PROPERTY;

BALLISTICS; SOIL CONSERVATION;

ELECTRON EMISSION;

EID: 0007343392 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s003390051107 Document Type: Article

Times cited : (1)

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