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Volumn 42, Issue 15, 1997, Pages 1282-1286

Influence of low energy ballistic electron on the transmittance properties of Au/Si interface studied by ballistic-electron-emission microscope

Author keywords

Au Si interface; Ballistic electron emission microscopy; Transmittance probability

Indexed keywords


EID: 0642332427     PISSN: 10016538     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02882760     Document Type: Article
Times cited : (2)

References (12)
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  • 2
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  • 3
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  • 4
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    • Ballistic-electron-emission microscopy investigation of Schottky barrier interface formation
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  • 7
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  • 9
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    • (1991) Phys. Rev. Lett. , vol.69 , pp. 2931
    • Hallen, H.D.1    Huang, T.2    Fernandez, A.3
  • 10
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    • Ballistic-electron-emission microscopy in investigation of Au/Si(100) Schottky barrier interface
    • Bai C L, Guo Y, Ballistic-electron-emission microscopy in investigation of Au/Si(100) Schottky barrier interface, Wuli Xuebao, 1995, 44(1):133.
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    • Bai, C.L.1    Guo, Y.2
  • 12
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    • Ballistic-electron-emission microscopy on the Au/n-Si(111) 7 × 7 interface
    • Cuberes, M. T., Bauer, A., Wen, H. J. et al., Ballistic-electron-emission microscopy on the Au/n-Si(111) 7 × 7 interface, J. Vac. Sci. Technol. B, 1994, 12: 2 422.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.