Formation of the charge balanced ZnSe/GaAs(1 1 0) interfaces by molecular beam epitaxy

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 486-489

  Maehashi, Kenzo ^a   Morota, Naohiko ^a   Murase, Yasuhiro ^a   Yasui, Nobuhiro ^a   Shikimi, Akihiro ^a   Nakashima, Hisao ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); INTERFACES (MATERIALS); REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; STACKING FAULTS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

CHARGE IMBALANCE; HIGH RESOLUTION X RAY DIFFRACTION;

MOLECULAR BEAM EPITAXY;

EID: 0032657081     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01382-7     Document Type: Article

References (5)

1. Kuo L.H., Salamanca-Riba L., Wu B.J., Haugen G.M., DePuydt J.M., Hofler G., Cheng H. J. Vac. Sci. Technol. B. 13:1995;1694.
2. Heun S., Paggel J.J., Sorba L., Rubini S., Franciosi A., Bonard J.-M., Ganiere J.-D. Appl. Phys. Lett. 70:1997;237.
3. Maehashi K., Hasegawa S., Nakashima H. J. Crystal Growth. 127:1993;98.
4. Maehashi K., Hasegawa S., Nakashima H. Jpn. J. Appl. Phys. 32:1993;642.
5. Wang W.I. J. Vac. Sci. Technol. B. 1:1983;630.