Measurements of epitaxially grown Pt/CaF2/Si(111) structures by ballistic electron emission microscopy and scanning tunneling microscopy

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 3, 1998, Pages 1692-1696

  Labella, V P ^a   Shusterman, Y ^a   Schowalter, L J ^a   Ventrice Jr , C A ^b  

^a Rensselaer Polytechnic Institute   (United States)

^b UNIVERSITY OF NEW ORLEANS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC STEP; BALLISTIC ELECTRON EMISSION MICROSCOPY; BALLISTIC ELECTRONS; DEFECT SITES; EPITAXIALLY GROWN; GROWTH MORPHOLOGY; IN-SITU; METAL INSULATOR SEMICONDUCTOR STRUCTURES; SCANNING TUNNELING MICROSCOPY (STM); SI (1 1 1); STEP EDGE; STM IMAGES; SUBMONOLAYER; ULTRA-THIN;

BALLISTICS; ELECTRON EMISSION; ELECTRON TRANSPORT PROPERTIES; FLUORINE; METAL INSULATOR BOUNDARIES; MIS DEVICES; MORPHOLOGY; PLATINUM; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; TRANSPORT PROPERTIES; WIND TUNNELS;

CRYSTAL ATOMIC STRUCTURE;

EID: 0007194074     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581286     Document Type: Article

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