Temperature dependence of photoluminescence from high-density GaAs/(GaAs)4(AlAs)2 quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 2, Issue 1-4, 1998, Pages 959-963

  Higashiwaki, Masataka ^a   Shimomura, Satoshi ^a   Hiyamizu, Satoshi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

(7 7 5)B; GaAs; Photoluminescence; Quantum wire

Indexed keywords

EID: 0007166316     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(98)00197-0     Document Type: Article

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