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Volumn , Issue , 2001, Pages 289-298

Reliability of Bipolar and MOS Circuits after FIB Modification

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROSTATIC SHIELDS; FOCUSED ION BEAMS (FIB);

EID: 0005969923     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (9)

References (11)
  • 3
    • 1542301018 scopus 로고    scopus 로고
    • Focused Ion Beam Irradiation Induced Damages on CMOS and Bipolar Technologies
    • Nov
    • J. Benbrik, et al., " Focused Ion Beam Irradiation Induced Damages on CMOS and Bipolar Technologies", ", ISTFA,Nov 1998, p49
    • (1998) ISTFA , pp. 49
    • Benbrik, J.1
  • 4
    • 10744223823 scopus 로고    scopus 로고
    • Focused Ion Beam Effects on MOS Transistor parameters
    • Nov.
    • A. Campbell, et. Al., "Focused Ion Beam Effects on MOS Transistor parameters", ISTFA, Nov. 1999, p273
    • (1999) ISTFA , pp. 273
    • Campbell, A.1
  • 5
    • 0013358501 scopus 로고    scopus 로고
    • 2D Physical simulation of degradation on transistors induced by FIB exposure of dielectric passivation
    • Oct.
    • J. Benbrik, et. Al.., "2D Physical simulation of degradation on transistors induced by FIB exposure of dielectric passivation", ", ESREF, Oct. 1999
    • (1999) ESREF
    • Benbrik, J.1
  • 6
    • 1542300928 scopus 로고    scopus 로고
    • Reliability Test Results for Pt FIB Interconnect Structures
    • Nov.
    • M. Zaragoza, "Reliability Test Results for Pt FIB Interconnect Structures", p. 263, ISTFA, Nov. 1999
    • (1999) ISTFA , pp. 263
    • Zaragoza, M.1
  • 11
    • 1542344235 scopus 로고    scopus 로고
    • Oral presentation at the 1999 FIB user group at the, 4 Oct
    • Oral presentation at the 1999 FIB user group at the ESREF conference, 4 Oct 1999.
    • (1999) ESREF Conference


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.