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Volumn , Issue , 2001, Pages 289-298
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Reliability of Bipolar and MOS Circuits after FIB Modification
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTROSTATIC SHIELDS;
FOCUSED ION BEAMS (FIB);
ANNEALING;
DEGRADATION;
ELECTRIC POTENTIAL;
ENERGY TRANSFER;
ION BEAMS;
IRRADIATION;
LIFE CYCLE;
MOS DEVICES;
PASSIVATION;
RELIABILITY;
SEMICONDUCTOR MATERIALS;
STATIC RANDOM ACCESS STORAGE;
TRANSISTORS;
BIPOLAR INTEGRATED CIRCUITS;
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EID: 0005969923
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (9)
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References (11)
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