48-GHz Digital IC's and 85-GHz Baseband Amplifiers Using Transferred-Substrate HBT's

IEEE Journal of Solid-State Circuits

Volumn 34, Issue 9, 1999, Pages 1196-1203

  Mensa, D ^a,e   Pullela, R ^b,e,f,g   Lee, Q ^a,e,h,i   Guthrie, J ^a,e,j   Martin, S C ^c,k   Smith, R P ^c,k,l,m   Jaganathan, S ^a,e,n,o   Mathew, T ^a,e,n,p   Agarwal, B ^d,e,f   Long, S I ^a,q,r,s,t   Rodwell, M ^a,e,u,v  

^a University of California   (United States)

^b NOKIA RESEARCH CENTER   (United States)

^c CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^d Rockwell Semiconductor Systems   (United States)

^e UNIVERSITY OF CALIFORNIA   (United States)

^f INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

^g LUCENT TECHNOLOGIES   (United States)

^h SICHUAN UNIVERSITY   (China)

ⁱ LEHIGH UNIVERSITY   (United States)

^j UNIVERSITY OF TORONTO   (Canada)

^k BROWN UNIVERSITY   (United States)

^l BATES COLLEGE   (United States)

^m GENERAL ELECTRIC COMPANY   (United States)

ⁿ INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^o TATA INSTITUTE OF FUNDAMENTAL RESEARCH   (India)

^p Department of Mechanical Engineering   (India)

^q UNIVERSITY OF CALIFORNIA   (United States)

^r Department of Obstetrics Gynecology   (United States)

^s VARIAN MEDICAL SYSTEMS   (United States)

^t ROCKWELL SCIENCE CENTER   (United States)

^u UNIVERSITY OF TENNESSEE   (United States)

^v STANFORD UNIVERSITY   (United States)

more..

Author keywords

Baseband amplifier; Heteroj unction bipolar transistor (HBT); Static frequency divider; Substrate transfer

Indexed keywords

EID: 0005654989     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.782076     Document Type: Article

References (15)

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