HBT IC process with copper substrate

Electronics Letters

Volumn 34, Issue 5, 1998, Pages 467-468

  Guthrie, J ^a   Mensa, D ^a   Agarwal, B ^a   Lee, Q ^a   Pullela, R ^a   Rodwell, M J W ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; MICROSTRIP LINES; SEMICONDUCTING POLYMERS; SUBSTRATES;

COPPER SUBSTRATES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032485123     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980372     Document Type: Article

References (5)

1. BHATTACHARYA, U., SAMOSKA, L., PULLELA, R., GUTHRIE, J., and RODWELL, M.J.W.: '170GHz transferred-substrate heterojunction bipolar transistor', Electron. Lett., 1996, 32, (15), pp. 1405-1406
2. PULLELA, R., LEE, Q., AGARWAL, B., MENSA, D., GUTHRIE, J., SAMOSKA, L., and RODWELL, M.: 'A > 400GHz fmax transferred-substrate HBT integrated circuit technology'. 55th Annual Device Research Conf. Dig., 1997
3. TANAKA, S., AMAMIYA, Y., MURAKAMI, S., SHIMAWAKI, H., GOTO, N., TAKAYAMA, Y., and HONJO, K.: 'Design considerations for millimeter-wave power HBT's based on gain performance analysis', IEEE Trans. Electron Devices, 1998, 45, (1), pp. 36-43
4. HILL, D., YARBOROUGH, R., KIM, T., and HIN-FAI CHAU, : 'Low thermal impedance MMIC technology', IEEE Microw. Guid. Wave Lett., 1997, 7, (2), pp. 36-38
5. max transferred-substrate heterojunction bipolar transistor', IEEE Electron Device Lett., 1997, 18, (5), pp. 228-231