Comparison of (Al,Ga)As(110) grown by molecular beam epitaxy with As2 and As4

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 3, 1996, Pages 2305-2308

  Holland, M C ^a   Stanley, C R ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 5544317615     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588926     Document Type: Review

References (6)

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4. M. C. Holland, A. H. Kean, and C. R. Stanley, J. Cryst. Growth 150, 455 (1995).
5. C. B. Sørensen, H, Gislason, D. Birkedal, and J. M. Hvam, Electron. Lett. (to be published).
6. C. T. Foxon and B. A. Joyce, Surf. Sci. 64, 293 (1977).