High-density, inductively coupled plasma etch of sub half-micron critical layers: Transistor polysilicon gate definition and contact formation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 5, 1998, Pages 2699-2706

  Westerheim, A C ^a   Jones, R D ^a   Mager, P J ^a   Dubash, J H ^a   Dalton, T J ^a   Goss, M W ^a   Baum, S K ^a   Dass, S K ^a  

^a Digital Semiconductor   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0004345421     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590260     Document Type: Article

References (20)

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