Growth and characterization of Zn1-xMgxSe mixed crystals

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3178, Issue , 1997, Pages 205-212

  Firszt, F ^a   Meczynska H ^a   Legowski S ^a   Szatkowski, J ^a   Falke, U ^b   Hietschold, M ^b   Paszkowicz, W ^c   Dluzewski, P ^c  

^a NICOLAUS COPERNICUS UNIVERSITY   (Poland)

^b CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^c INSTITUTE OF PHYSICS   (Poland)

Author keywords

Luminescence; Mixed crystals; Polytypism; Structural properties; Wide gap II VI semiconductors; Zn1 XMg xSe

Indexed keywords

CRYSTALLOGRAPHY; ELECTROMAGNETIC WAVES; GROWTH (MATERIALS); LIGHT; LIGHT EMISSION; LIGHT SOURCES; LUMINESCENCE; MAGNESIUM; MAGNESIUM PRINTING PLATES; PHASE TRANSITIONS; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; SULFIDE MINERALS; ZINC; ZINC SULFIDE;

ELECTRON TRANSMISSIONS; EXCITON TRANSITION ENERGIES; EXPERIMENTAL STUDIES; HIGH PRESSURE BRIDGMAN METHODS; HIGH RESOLUTIONS; LUMINESCENT PROPERTIES; MAGNESIUM CONCENTRATIONS; MIXED CRYSTALS; POLYTYPES; POLYTYPISM; REFLECTION SPECTRUMS; ROOM TEMPERATURES; SPHALERITE STRUCTURES; TEMPERATURE RANGES; WIDE-GAP II-VI SEMICONDUCTORS; WURTZITE; X-RAY DIFFRACTIONS; ZN1-XMG XSE;

CRYSTALS;

EID: 0003022549     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.280734     Document Type: Conference Paper

References (29)

1. N. Nakayama, S. Itoh, H. Okuyama, M. Ozawa, T. Ohata, K. Nakano, M. Ikeda, A. Ishibashi and Y. Mori, "Continuous-wave operation of 489.9 nm blue laser diode at room temperature", Electron. Lett. 29 (25), 2194-2195 (1993).
2. S. Itoh, N. Nakayama, S. Matsumato, M. Nagai, K. Nakano, M. Ozawa, H. Okuyama, S. Tomiya, T. Ohata, M. Ikeda, A. Ishibashi and Y. Mori, "ZnCdSe/ZnSSe/ZnMgSSe SCH Laser Diode with a GaAs Buffer Layer", Jpn. J. Appl. Phys., 33 (7A) L938-L940 (1994).
3. 1-y cladding layers operating up to room temperature", Appl. Phys. Lett. 62 (20), 2462-2464 (1993).
4. R. L. Gunshor, J. Han, A. V. Nurmikko and A. Salokatve, "The development of low voltage room temperature continuous wave laser diodes" , J. Cryst. Growth, 150, 790-796 (1995).
5. A. Salokatve, H. Jeon, J. Ding, M. Hovinen, A. V. Nurmikko, D. C. Grillo, Li He, J. Han, Y. Fan, M. Ringle, R. L. Gunshor, G. C. Hua and N. Otsuka, "Continuous-wave, room temperature, ridge waveguide gree-blue diode laser" Electron. Lett, 29 (25), 2192-2193 (1993).
6. A. Cavus, L. Zeng, M. C. Tamargo, N. Bamvpha, F. Semendy and A. Gray, "ZnCdSe/ZnCdMgSe quantum wells on InP substrates for visible emitters", J. Appl. Phys. 68 (24), 3446-3448 (1996).
7. D. B. Eason, Z. Yu, W. C. Hughes, W. H. Roland, C. Boney, J. W. Cook, Jr., J. F. Schetzina, G. Cantwell, and W. C. Harsch, "High-brightness blue and green light-emitting diodes" Appl. Phys. Lett. 66 (2), 115-117 (1995).
8. D. Eason, J. Ren, Z. Yu, C. Hughes, J. W. Cook, Jr., J. F. Schetzina, N. A. El-Masry, G. Cantwell, and W. C. Harsch, "Blue and green light-emitting diode structures grown by molecular beam epitaxy on ZnSe substrates" , J. Cryst. Growth, 150, 718-724 (1995).
9. J. W. Cook and J. F. Schetzina, "Blue-green light-emitting diodes promise full-color displays" Laser Focus World, March 1995, 101-104, (1995).
10. G. C. Hua, N. Otsuka, D. C. Grillo, Y. Fan, J. Han, M. D. Ringle, R. L. Gunshor, M. Hovinen and A. V. Nurmikko, "Microstructure study of a degraded pseudomorfic separate confinement heterostructure blue-green laser diode", Appl. Phys.Lett., 65 (11), 1331-1334 (1994).
11. M. Hovinen, J. Ding, A. V. Nurmikko, G. C. Hua, D. C. Grillo, Li He, J.Han and R. L. Gunshor, "Degradation of (Zn,Cd)Se quantum well heterostructures for blue/green light emitters under optical injection", Appl. Phys. Lett., 66 (16), 2013-2115 (1995).
12. 1-xSe quantum wells", Appl. Phys. Lett., 66 (3), 358-360 (1995).
13. S. Guha, H. Cheng, J. M. DePuydt, M. A. Haase, J. Qiu, B. J. Wu and G. E. Hofler, "〈100〉 dark line effect in blue-green light emitters", Appl. Phys. Lett., 65 (7), 801-803 (1994).
14. S. Ishibashi, "II-VI Blue-Green Laser Diodes", IEEE Journal of Selectrd Topics of Quantum Electronics, 1 (2), 741-748 (1995).
15. D. J. Chadi, "Doping in ZnSe, ZnTe, MgSe and MgTe Wide-Band-Gap Semiconductors", Phys. Rev. Lett. 72 (4), 534-537 (1993).
16. 2" Appl. Phys. Lett., 66 (12), 1518-1520, (1995).
17. xSe quantum wells in ZnMgSe", Semicond. Sci. Technol., 10, 489-491 (1995).
18. xSe", Semicond. Sci. Technol. 10, 197-200 (1995).
19. xSe:I mixed crystals grown by Bridgman method", J. Cryst. Growth, 159, 167-170 (1996).
20. xTe alloys", Journal Electronic Mater. 9 (1), 165-184 (1980).
21. yTe crystals", Acta Phys. Polon. A, 86 (4), 605-611 (1994).
22. 1-xTe", J. Electrochem. Soc. 118 (8), 979-985 (1971).
23. K. Itoh, "MgTe-CdTe, a new material for visible light-emitting diodes", in II-VI Semiconducting Compounds, ed. D. G. Thomas, W. A. Benjamin, Inc. New York, Amsterdam, 1296-1303 (1967).
24. R. Triboulet, "The growth of bulk ZnSe crystals", Semicond. Sci. Technol. 6, A18-A23 (1991).
25. H. Okuyama, K. Nakano, T. Miyajima, K. Akimoto, "Epitaxial growth of ZnMgSSe on GaAs Substrate by Molecular Beam Epitaxy", Jpn. J. Appl. Phys. 30 (9B), L1520-L1623 (1991).
26. 1-y on (100) GaAs", J. Cryst. Growth, 159, 54-57 (1996).
27. xS solid solutions" , Solid State Commun. 55 (4), 345-349 (1985).
28. X. W. Fan and J. Woods, "Blue Electroluminescence in Forward-Biased ZnSe Diodes", IEEE Trans. Electr. Dev. ED-28 (4), 428-433 (1981).
29. G. J. Yi, L. Radomsky and G. F. Neumark, "Temperature dependence of luminescence in ZnSe and role of excitation transfer", J. Cryst. Growth, 138, 208-212 (1994).