Epitaxial growth of znmgsse on gaas substrate by molecular beam epitaxy

Japanese Journal of Applied Physics

Volumn 30, Issue 9, 1991, Pages L1620-L1623

  Okuyama, Hiroyuki ^a   Nakano, Kazushi ^a   Miyajima, Takao ^a   Akimoto, Katsuhiro ^a  

^a SONY CORPORATION   (Japan)

Author keywords

Band gap energy (Eg); Cladding layer; Lattice constant; MgS; MgSe; Photoluminescence (PL); Refractive index

Indexed keywords

CRYSTALS--EPITAXIAL GROWTH; LASERS, SEMICONDUCTOR; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE;

BLUE LIGHT;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0026227153     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.30.L1620     Document Type: Article

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