Nitride layers formed by nitrogen implantation into metals

Materials Science and Engineering: A

Volumn 253, Issue 1-2, 1998, Pages 135-142

  Miyagawa, Y ^a   Nakao, S ^a   Baba, K ^b   Ikeyama, M ^a   Saitoh, K ^a   Miyagawa, S ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b Technology Cent of Nagasaki   (Japan)

Author keywords

High dose ion implantation; Nitride layer formation; Nitrogen implantation

Indexed keywords

ANNEALING; COMPUTER SIMULATION; CRYSTAL STRUCTURE; FILM GROWTH; MECHANICAL VARIABLES MEASUREMENT; METALS; MONTE CARLO METHODS; NITRIDES; NITROGEN; RADIATION DAMAGE; SATURATION (MATERIALS COMPOSITION); X RAY DIFFRACTION ANALYSIS;

HIGH DOSE ION IMPLANTATION; NITRIDE LAYER FORMATION; RESONANT NUCLEAR REACTION ANALYSIS; SOFTWARE PACKAGE SASAMAL;

ION IMPLANTATION;

EID: 0002983688     PISSN: 09215093     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0921-5093(98)00719-9     Document Type: Article

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