Effect of V/III ratio on the optical properties of MOCVD grown undoped GaAs layers

Solid State Communications

Volumn 103, Issue 7, 1997, Pages 411-416

  Hudait, Mantu Kumar ^a,b   Modak, Prasanta ^b   Hardikar, Shyam ^b   Krupanidhi, S B ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

^b BHARAT ELECTRONICS LIMITED   (India)

Author keywords

A. semiconductors

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL IMPURITIES; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SPECTROSCOPY;

ELECTROCHEMICAL CAPACITANCE VOLTAGE PROFILER; LOW TEMPERATURE PHOTOLUMINESCENCE (PL) SPECTROSCOPY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031208325     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(97)00210-X     Document Type: Article

References (6)

1. - Krupanidhi, S.B., Mat. Res. Soc. Symp. Proc., Vol. 421, paper C5.4. San Francisco, USA, 1996.
2. Pavesi, L. and Guzzi, M., J. Appl. Phys., 75, 1994, 4779.
3. Roth, A.P., Charbonneau, S. and Goodchild, R.G., J. Appl. Phys., 54, 1983, 5350.
4. Kamiya, T. and Wagner, E., J. Appl. Phys., 48, 1977, 1928.
5. Stringfellow, G.B., Organometallic Vapor-Phase Epitaxy: Theory and Practice. Academic Press, San Diego, CA, 1989.
6. Tischler, M.A., IBM J. Res. Develop., 34, 1990, 828.