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Volumn 291, Issue 1-2, 1999, Pages 380-387

Formation of FeSi and FeSi2 films from cis-Fe(SiCl3)2(CO)4 by MOCVD -precursor versus substrate control

Author keywords

Deposition mechanism; DFT; Iron silicides; MOCVD; UPS

Indexed keywords

ACTIVATION ENERGY; BOND STRENGTH (CHEMICAL); CHLORINE COMPOUNDS; DENSITY FUNCTIONAL THEORY; IRON; IRON COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; REACTION INTERMEDIATES; SILICIDES; SUBSTRATES; TEXTURES; VAPOR DEPOSITION;

EID: 0002460042     PISSN: 00201693     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0020-1693(99)00158-9     Document Type: Article
Times cited : (12)

References (44)
  • 11
    • 0041081592 scopus 로고    scopus 로고
    • MSc Thesis, National University of Singapore
    • L. Luo, MSc Thesis, National University of Singapore, 1997.
    • (1997)
    • Luo, L.1
  • 28
    • 0003584418 scopus 로고
    • in: S. Patai, Z. Rappoport (Eds.), Wiley, Chichester
    • (b) T.D. Tilley, in: S. Patai, Z. Rappoport (Eds.), The Silicon-Heteroatom Bond, Wiley, Chichester, 1992.
    • (1992) The Silicon-Heteroatom Bond
    • Tilley, T.D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.