Substrate influence on the formation of FeSi and FeSi2 films from cis-Fe(SiCl3)2(CO)4 by LPCVD

Thin Solid Films

Volumn 325, Issue 1-2, 1998, Pages 87-91

  Luo, L ^a   Zybill, C E ^a,b   Ang, H G ^a   Lim, S F ^a   Chua, D H C ^a   Lin, J ^a   Wee, A T S ^a   Tan, K L ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

FeSi films; Film composition; Film formation; Low pressure chemical vapor deposition

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; COMPOSITION; ELECTRIC CONDUCTIVITY OF SOLIDS; GLASS; IRON COMPOUNDS; POLYCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

HOT WALL REACTORS; LOW PRESSURE CHEMICAL VAPOR DECOMPOSITION (LPCVD);

METALLIC FILMS;

EID: 0032114650     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)00494-5     Document Type: Article

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