Characteristics of P-channel SOI LDMOS transistor with tapered field oxides

ETRI Journal

Volumn 21, Issue 3, 1999, Pages 22-27

  Kim, Jongdae ^a,b,c   Kim, Sang Gi ^c,d   Roh, Tae Moon ^a   Park, Hoon Soo ^e   Koo, Jin Gun ^e   Kim, Dae Yong ^e  

^a Kyungpook National University   (South Korea)

^b UNIVERSITY OF NEW MEXICO   (United States)

^c Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^d Yeungnam University   (South Korea)

^e Electronics and Telecom Res Inst ^*

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0002446483     PISSN: 12256463     EISSN: None     Source Type: Journal    
DOI: 10.4218/etrij.99.0199.0304     Document Type: Article

References (13)

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12. DIOS AND DESSIS User's Manual, ISE, Jan. 1995.
13. Jongdae Kim, Sang-Gi Kim, Tae Moon Roh, Jin Gun Koo, and Kee-Soo Nam, "A Novel p-channel SOI LDMOS Transistor with Tapered Field Oxides," Proceeding of ISPSD '98, 1998, pp. 375-378.