Molecular beam epitaxy growth kinetics for group III nitrides

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 3, 1996, Pages 2346-2348

  Foxon, C T ^a   Cheng, T S ^a   Hooper, S E ^a   Jenkins, L C ^a   Orton, J W ^a   Lacklison, D E ^a   Novikov, S V ^b   Popova, T B ^b   Tret'yakoy, V V ^b  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041557985     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588857     Document Type: Article

References (12)

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