Growth kinetics of GaN grown by gas-source molecular beam epitaxy

Journal of Crystal Growth

Volumn 175-176, Issue PART 1, 1997, Pages 89-93

  Jenny, J R ^a   Kaspi, R ^b   Evans, K R ^a,c  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b WRIGHT STATE UNIVERSITY   (United States)

^c Semiconductor Laser International   (United States)

Author keywords

GaN; Growth kinetics; GSMBE; NH3

Indexed keywords

AMMONIA; COMPOSITION EFFECTS; DESORPTION; MASS SPECTROMETRY; MOLECULAR BEAM EPITAXY; REACTION KINETICS; SEMICONDUCTOR GROWTH;

DESORPTION MASS SPECTROMETRY (DMS); GALLIUM NITRIDE; GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031140977     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01020-2     Document Type: Article

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